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cond-mat.mes-hall2019★ 32 cited
Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions
Thayer S. Walmsley, Bhim Chamlagain, Tianjiao Wang +2
We study the rise and decay times in BP-MoS2 heterojunctions through gate- and wavelength-dependent scanning photocurrent measurements. Our results have shown that the Schottky bar…
cond-mat.mes-hall2013
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
Meeghage Madusanka Perera, Ming-Wei Lin, Hsun-Jen Chuang +6
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron…