481 citations · 952 across the 5 of their papers we have counts for
6 papers
Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions
Thayer S. Walmsley, Bhim Chamlagain, Tianjiao Wang +2
We study the rise and decay times in BP-MoS2 heterojunctions through gate- and wavelength-dependent scanning photocurrent measurements. Our results have shown that the Schottky bar…
Thermally Oxidized Two-dimensional TaS2 as a High-\k{appa} Gate Dielectric for MoS2 Field-Effect Transistors
Bhim Chamlagain, Qingsong Cui, Sagar Paudel +3
We report a new approach to integrating high-\k{appa} dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assemb…
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
Hsun-Jen Chuang, Bhim Chamlagain, Michael Koehler +5
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutional…
High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire +7
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Ou…
Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire +9
We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on…
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
Meeghage Madusanka Perera, Ming-Wei Lin, Hsun-Jen Chuang +6
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron…