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20132019
most citedHigh Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

481 citations · 952 across the 5 of their papers we have counts for

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cond-mat.mes-hall2016★ 428 cited

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

Hsun-Jen Chuang, Bhim Chamlagain, Michael Koehler +5

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutional…