481 citations · 518 across the 3 of their papers we have counts for
3 papers
Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions
Thayer S. Walmsley, Bhim Chamlagain, Tianjiao Wang +2
We study the rise and decay times in BP-MoS2 heterojunctions through gate- and wavelength-dependent scanning photocurrent measurements. Our results have shown that the Schottky bar…
High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire +7
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Ou…
Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire +9
We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on…