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20132026
most citedHigh Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

481 citations · 1.6k across the 13 of their papers we have counts for

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Showing 2014Show all

2 papers · 1 filter

cond-mat.mtrl-sci2014★ 481 cited

High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire +7

We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Ou…

cond-mat.mtrl-sci2014★ 5 cited

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire +9

We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on…