481 citations · 1.6k across the 13 of their papers we have counts for
15 papers
Nanoscale Mapping of Strain-engineered Excitons in Monolayer WSe
Anna S. Roche, Nicholas V. Proscia, Paul D. Cunningham +12
Excitons in monolayer transition metal dichalcogenides (TMDs) are highly sensitive to external stimuli, allowing control of resonance energies and lifetimes through electric and ma…
Ferroelectric modulation of quantum emitters in monolayer WS
Sung-Joon Lee, Hsun-Jen Chuang, Andrew Yeats +3
Quantum photonics promises significant advances in secure communications, metrology, sensing and information processing/computation. Single photon sources are fundamental to this e…
Room-temperature oxygen transport in nano-thin BixOySez enables precision modulation of 2D materials
Zachariah Hennighausen, Bethany M. Hudak, Madeleine Phillips +8
Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transitio…
Laser-patterned submicron Bi2Se3-WS2 pixels with tunable circular polarization at room temperature
Zachariah Hennighausen, Darshana Wickramaratne, Kathleen M. McCreary +7
Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer…
Nanoscale Optical Imaging of 2D Semiconductor Stacking Orders by Exciton-Enhanced Second Harmonic Generation
Kaiyuan Yao, Shuai Zhang, Emanuil Yanev +9
Second harmonic generation (SHG) is a nonlinear optical response arising exclusively from broken inversion symmetry in the electric-dipole limit. Recently, SHG has attracted widesp…
Stacking-Dependent Optical Properties in Bilayer WSe2
Kathleen M. McCreary, Madeleine Phillips, Hsun-Jen Chuang +4
The twist angle between the monolayers in van der Waals heterostructures provides a new degree of freedom in tuning material properties. We compare the optical properties of WSe2 h…
Low-Temperature 2D/2D Ohmic Contacts in WSe Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition
L. J. Stanley, Hsun-Jen Chuang, Zhixian Zhou +4
We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multi-terminal WSe Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating t…
Atomic reconstruction and moiré patterns in transition metal dichalcogenide van der Waals heterostructures
Matthew R. Rosenberger, Hsun-Jen Chuang, Madeleine Phillips +5
Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create van de…
Prominent room temperature valley polarization in WS2/graphene heterostructures grown by chemical vapor deposition
Ioannis Paradisanos, Kathleen M. McCreary, Davoud Adinehloo +8
We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of va…
Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure
Aubrey T. Hanbicki, Hsun-Jen Chuang, Matthew R. Rosenberger +5
An emerging class of semiconductor heterostructures involves stacking discrete monolayers such as the transition metal dichalcogenides (TMDs) to form van der Waals heterostructures…
Understanding Variations in Circularly Polarized Photoluminescence in Monolayer Transition Metal Dichalcogenides
Kathleen M. McCreary, Marc Currie, Aubrey T. Hanbicki +2
Monolayer transition metal dichalcogenides are promising materials for valleytronic operations. They exhibit two inequivalent valleys in the Brillouin zone, and the valley populati…
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
Hsun-Jen Chuang, Bhim Chamlagain, Michael Koehler +5
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutional…
High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire +7
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Ou…
Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire +9
We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on…
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
Meeghage Madusanka Perera, Ming-Wei Lin, Hsun-Jen Chuang +6
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron…