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20132026
most citedHigh Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

481 citations · 1.6k across the 13 of their papers we have counts for

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cond-mat.mes-hall2013

Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

Meeghage Madusanka Perera, Ming-Wei Lin, Hsun-Jen Chuang +6

We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron…