331 citations · 1.8k across the 54 of their papers we have counts for
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Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure
Shijie Xu, Yan Huang, Farzad Mahfouzi +15
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…
All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
Jiacheng Shi, Victor Lopez-Dominguez, Sevdenur Arpaci +14
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential re…
Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction
Shijie Xu, Zhizhong Zhang, Farzad Mahfouzi +14
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the exte…
Supercell formation in epitaxial rare-earth ditelluride thin films
Adrian Llanos, Salva Salmani-Rezaie, Jinwoong Kim +3
Square net tellurides host an array of electronic ground states and commonly exhibit charge-density-wave ordering. Here we report the epitaxy of DyTe on atomically flat MgO…
Bismuth antiphase domain wall: A three-dimensional manifestation of the Su-Schrieffer-Heeger model
Jinwoong Kim, Cheng-Yi Huang, Hsin Lin +2
The Su, Schrieffer and Heeger (SSH) model, describing the soliton excitations in polyacetylene due to the formation of antiphase domain walls (DW) from the alternating bond pattern…