activity
19992026
most citedGeneralized stacking fault energy surfaces and dislocation properties of aluminum

331 citations · 1.8k across the 54 of their papers we have counts for

collaborators

54 papers

cond-mat.mtrl-sci2026

Relativistic Effects in LaBi Thin Films

Reiley Dorrian, Sungmin Song, Jinwoong Kim +4

Chemical substitution in crystalline quantum materials is a powerful way to explore the consequences of strong spin-orbit coupling on their structural and electronic properties. In…

cond-mat.mtrl-sci2025★ 5 cited

Stacking-Selective Epitaxy of Rare-Earth Diantimonides

Reiley Dorrian, Jinwoong Kim, Adrian Llanos +4

Deterministic control of the layering configuration of two-dimensional quantum materials plays a central role in studying their emergent electronic properties. Here we demonstrate…

cond-mat.mtrl-sci2024

Unveiling the Electronic, Transport, and Migration Properties of the Te-Defect Lattice in DyTe

Jinwoong Kim, Nicholas Kioussis

The rare-earth ditellurides are known to form two-dimensional square lattice where the strong Fermi surface nesting leads to structural modulation. In contrast to charge density wa…

cond-mat.mtrl-sci2024★ 9 cited

Monoclinic LaSb Superconducting Thin Films

Adrian Llanos, Giovanna Campisi, Veronica Show +5

Rare-earth diantimondes exhibit coupling between structural and electronic orders which are tunable under pressure and temperature. Here we present the discovery of a new polymorph…

physics.app-ph2023★ 1 cited

Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure

Shijie Xu, Yan Huang, Farzad Mahfouzi +15

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…

physics.app-ph2023★ 40 cited

All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance

Jiacheng Shi, Victor Lopez-Dominguez, Sevdenur Arpaci +14

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential re…