activity
19971999
most citedNanoscale Field-Effect Transistors: An Ultimate Size Analysis

125 citations · 241 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall1999★ 21 cited

Shrinking limits of silicon MOSFET's: Numerical study of 10-nm-scale devices

Y. Naveh, K. K. Likharev

We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and t…

cond-mat.mes-hall1998★ 36 cited

Shot noise in diffusive conductors: A quantitative analysis of electron-phonon interaction effects

Y. Naveh, D. V. Averin, K. K. Likharev

Using the 'drift-diffusion-Langevin' equation, we have quantitatively analyzed the effects of electron energy relaxation via their interaction with phonons, generally in presence o…

cond-mat.mes-hall1998★ 20 cited

Noise properties and ac conductance of mesoscopic diffusive conductors with screening

Y. Naveh, D. V. Averin, K. K. Likharev

A theory of non-equilibrium (``shot'') noise and high frequency conductance in diffusive mesoscopic conductors with screening is presented. Detailed results are obtained for two si…

cond-mat1997★ 125 cited

Nanoscale Field-Effect Transistors: An Ultimate Size Analysis

F. G. Pikus, K. K. Likharev

We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channe…

cond-mat.mes-hall1997★ 39 cited

Effect of screening on shot noise in diffusive mesoscopic conductors

Y. Naveh, D. V. Averin, K. K. Likharev

Shot noise in diffusive mesoscopic conductors, at finite observation frequencies (comparable to the reciprocal Thouless time ), is analyzed with an account of screeni…