215 citations · 442 across the 4 of their papers we have counts for
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Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors
Alina Veligura, Paul J. Zomer, Ivan J. Vera-Marun +3
Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of expe…
Comparison between charge and spin transport in few layer graphene
T. Maassen, F. K. Dejene, M. H. D. Guimarães +2
Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the…
Electronic spin transport in graphene field effect transistors
M. Popinciuc, C. Józsa, P. J. Zomer +4
Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investiga…
Controlling the efficiency of spin injection into graphene by carrier drift
C. Józsa, M. Popinciuc, N. Tombros +2
Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction o…