6 papers
Role of surface states and band modulations in ultrathin ruthenium interconnects
Gyungho Maeng, Subeen Lim, Mi Gyoung Lee +3
Mitigating the RC delay from transistor miniaturization is essential for next-generation devices, driving a focus on interconnect electrical performance. Current copper-based inter…
First-principles high-throughput screening of ruthenium compounds for advanced interconnects
Gyungho Maeng, Subeen Lim, Bonggeun Shong +1
As interconnect dimensions continue to shrink, the industry-standard copper faces a critical increase in resistivity, presenting a significant hurdle to overall device performance.…
First-principles modeling of electrostatics and transport in 2D topological transistors
Hyeonseok Choi, Yosep Park, Subeen Lim +1
We develop a simulation framework for electrostatic and transport modeling of 2D Topological insulator field-effect transistor (2D TIFETs), based solely on first-principles calcula…
Designing Extremely Low-Power Topological Transistors with 1T'-MoS2 and HZO for Cryogenic Applications
Yosep Park, Yungyeong Park, Hyeonseok Choi +2
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipati…
Validation of constant mean free path and relaxation time approximations for metal resistivity: explicit treatment of electron-phonon interactions
Subeen Lim, Yumi Kim, Gyungho Maeng +1
The figure of merit the product of resistivity and mean free path (MFP) evaluated from first-principles calculations, is widely adopted to screen promising interconnect meta…
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition
Yungyeong Park, Yosep Park, Hyeonseok Choi +3
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superi…