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cond-mat.mes-hall2013★ 137 cited
Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors
J. Renteria, R. Samnakay, S. L. Rumyantsev +3
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 chann…
cond-mat.mes-hall2013★ 45 cited
All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits
J. Renteria, R. Samnakay, C. Jiang +8
We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, th…