13 citations · 37 across the 4 of their papers we have counts for
4 papers
All-nitride and In-free AlGaN:Mn/GaN distributed Bragg reflectors for the near-infrared
G. Capuzzo, D. Kysylychyn, R. Adhikari +4
Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not o…
Controlling a three dimensional electron slab of graded AlGaN
R. Adhikari, Tian Li, G. Capuzzo +1
Polarization induced degenerate -type doping with electron concentrations up to 10\,cm is achieved in graded AlGaN layers (: 0\%$\rightarrow…
Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies
R. Adhikari, W. Stefanowicz, B. Faina +3
A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensiti…
Mn as surfactant for the self-assembling of AlGaN/GaN layered heterostructures
Thibaut Devillers, Li Tian, Rajdeep Adhikari +2
The structural analysis of GaN and AlGaN/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process,…