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Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
Keliang He, Charles Poole, Kin Fai Mak +1
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 m…
Control of valley polarization in monolayer MoS2 by optical helicity
Kin Fai Mak, Keliang He, Jie Shan +1
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge…
Structurally Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene
Zhiqiang Li, Chun Hung Lui, Emmanuele Cappelluti +5
The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric feature…
Ultrafast Photoluminescence from Graphene
Chun Hung Lui, Kin Fai Mak, Jie Shan +1
Since graphene has no band gap, photoluminescence is not expected from relaxed charge carriers. We have, however, observed significant light emission from graphene under excitation…
Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
Kin Fai Mak, Chun Hung Lui, Jie Shan +1
It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical con…