activity
20092016
most citedAtomically thin MoS2: A new direct-gap semiconductor

15.5k citations · 25.4k across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2016★ 52 cited

Characterization and control of ZnGeN2 cation lattice ordering

Eric W. Blanton, Keliang He, Jie Shan +1

ZnGeN2 and other heterovalent ternary semiconductors have important potential applications in optoelectronics, but ordering of the cation sublattice, which can affect the band gap,…

cond-mat.mtrl-sci2016★ 10 cited

Raman study of the vibrational modes in ZnGeN2 (0001)

Eric W. Blanton, Mark Hagemann, Keliang He +3

A Raman spectroscopy study was carried out for ZnGeN2 with direction of propagation along the (0001) crystallographic direction on hexagonal single crystal platelets obtained by re…

cond-mat.mes-hall2013★ 989 cited

Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2

Keliang He, Charles Poole, Kin Fai Mak +1

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 m…

cond-mat.mtrl-sci2012★ 2.9k cited

Observation of tightly bound trions in monolayer MoS2

Kin Fai Mak, Keliang He, Changgu Lee +4

Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contra…

cond-mat.mes-hall2012★ 4.1k cited

Control of valley polarization in monolayer MoS2 by optical helicity

Kin Fai Mak, Keliang He, Jie Shan +1

Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge…

cond-mat.mes-hall2011★ 75 cited

Structurally Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene

Zhiqiang Li, Chun Hung Lui, Emmanuele Cappelluti +5

The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric feature…

cond-mat.mtrl-sci2010★ 409 cited

Seeing many-body effects in single- and few-layer graphene: Observation of two-dimensional saddle-point excitons

Kin Fai Mak, Jie Shan, Tony F. Heinz

Significant excitonic effects were observed in graphene by measuring its optical conductivity in a broad spectral range including the two-dimensional π-band saddle-point singularit…

cond-mat.mes-hall2010★ 498 cited

Ultrafast Photoluminescence from Graphene

Chun Hung Lui, Kin Fai Mak, Jie Shan +1

Since graphene has no band gap, photoluminescence is not expected from relaxed charge carriers. We have, however, observed significant light emission from graphene under excitation…

cond-mat.mtrl-sci2010★ 15.5k cited

Atomically thin MoS2: A new direct-gap semiconductor

Kin Fai Mak, Changgu Lee, James Hone +2

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through char…

cond-mat.mtrl-sci2010★ 318 cited

Electronic Structure of Few-Layer Graphene: Experimental Demonstration of Strong Dependence on Stacking Sequence

Kin Fai Mak, Jie Shan, Tony F. Heinz

The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging…

cond-mat.mes-hall2009★ 642 cited

Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy

Kin Fai Mak, Chun Hung Lui, Jie Shan +1

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical con…