3 papers
physics.ins-det2017
Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2
Z. Galloway, V. Fadeyev, P. Freeman +27
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used…
physics.ins-det2017
Neutron irradiation test of depleted CMOS pixel detector prototypes
Igor Mandić, Vladimir Cindro, Andrej Gorišek +11
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 kcm initial resistivity (by LFoundry 150 nm process) were studied using…
physics.ins-det2017
Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process
B. Hiti, V. Cindro, A. Gorišek +8
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential cand…