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Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions
U. Chandni, K. Watanabe, T. Taniguchi +1
We investigate tunneling in metal-insulator-metal junctions employing few atomic layers of hexagonal boron nitride (hBN) as the insulating barrier. While the low-bias tunnel resist…
Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
Junjie Wang, Daniel Rhodes, Simin Feng +7
Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides…
Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions
Markus Parzefall, Palash Bharadwaj, Achint Jain +3
The ultrafast conversion of electrical to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the…