activity
20102024
most citedBoron nitride substrates for high-quality graphene electronics

7.1k citations · 34.6k across the 260 of their papers we have counts for

collaborators
Showing 2013Show all

6 papers · 1 filter

cond-mat.mes-hall2013★ 130 cited

Electron-Hole Asymmetric Integer and Fractional Quantum Hall Effect in Bilayer Graphene

Angela Kou, Benjamin E. Feldman, Andrei J. Levin +4

The nature of fractional quantum Hall (FQH) states is determined by the interplay between the Coulomb interaction and the symmetries of the system. The unique combination of spin,…

cond-mat.mes-hall2013★ 78 cited

Screening Charged Impurities and Lifting the Orbital Degeneracy in Graphene by Populating Landau Levels

Adina Luican-Mayer, Maxim Kharitonov, Guohong Li +7

We report the observation of an isolated charged impurity in graphene and present direct evidence of the close connection between the screening properties of a 2D electron system a…

cond-mat.mtrl-sci2013★ 12 cited

Gate dependent Raman spectroscopy of graphene on hexagonal boron nitride

Kanokporn Chattrakun, Shengqiang Huang, K. Watanabe +3

Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the doping level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graph…

cond-mat.mes-hall2013★ 48 cited

Etched graphene quantum dots on hexagonal boron nitride

S. Engels, A. Epping, C. Volk +6

We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a stat…

cond-mat.mes-hall2013★ 311 cited

Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state

A. F. Young, J. D. Sanchez-Yamagishi, B. Hunt +5

Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials suc…

cond-mat.mes-hall2013★ 1.7k cited

Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure

B. Hunt, J. D. Sanchez-Yamagishi, A. F. Young +6

Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a…