476 citations · 634 across the 4 of their papers we have counts for
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cond-mat.mes-hall2010★ 11 cited
Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability
Sneh Saurabh, M. Jagadesh Kumar
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do…
cond-mat.mes-hall2010★ 147 cited
Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis
Sneh Saurabh, M. Jagadesh Kumar
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high thres…