most citedEstimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability

11 citations · 11 across the 1 of their papers we have counts for

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cond-mat.mes-hall2010★ 11 cited

Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability

Sneh Saurabh, M. Jagadesh Kumar

Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do…