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Detection and modeling of hole capture by single point defects under variable electric fields
Artur Lozovoi, YunHeng Chen, Gyorgy Vizkelethy +4
Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neigh…
Semiempirical modeling of bound states of deep defects in semiconductor quantum technologies
YunHeng Chen, Lachlan Oberg, Johannes Flick +3
A significant hurdle in developing high-performance semiconductor quantum technologies utilizing deep defects is related to charge dynamics. Unfortunately, progress in modeling the…
Probing the Evolution of Electron Spin Wavefunction of NV Center in diamond via Pressure Tuning
Kin On Ho, Man Yin Leung, P. Reddy +11
Understanding the profile of a qubit's wavefunction is key to its quantum applications. Unlike conducting systems, where a scanning tunneling microscope can be used to probe the el…
Optical activation and detection of charge transport between individual color centers in room-temperature diamond
Artur Lozovoi, Harishankar Jayakumar, Damon Daw +5
Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence mi…
Nanoscale vector electric field imaging using a single electron spin
M. S. J Barson, L. M. Oberg, L. P. McGuinness +4
The ability to perform nanoscale electric field imaging of elementary charges at ambient temperatures will have diverse interdisciplinary applications. While the nitrogen-vacancy (…
Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes
Michael Hoese, Prithvi Reddy, Andreas Dietrich +4
Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusua…