36 citations · 52 across the 4 of their papers we have counts for
4 papers
Stacking domain morphology in epitaxial graphene on silicon carbide
Tobias A. de Jong, Luuk Visser, Johannes Jobst +2
Terrace-sized, single-orientation graphene can be grown on top of a carbon buffer layer on silicon carbide by thermal decomposition. Despite its homogeneous appearance, a surprisin…
Low-Energy Electron Microscopy contrast of stacking boundaries: comparing twisted few-layer graphene and strained epitaxial graphene on silicon carbide
Tobias A. de Jong, Xingchen Chen, Johannes Jobst +3
Stacking domain boundaries occur in Van der Waals heterostacks whenever there is a twist angle or lattice mismatch between subsequent layers. Not only can these domain boundaries h…
Stacking domains in graphene on silicon carbide: a pathway for intercalation
T. A. de Jong, E. E. Krasovskii, C. Ott +3
Graphene on silicon carbide (SiC) bears great potential for future graphene electronic applications because it is available on the wafer-scale and its properties can be custom-tail…
Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)
M. Copel, S. Oida, A. Kasry +3
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution suffic…