activity
20092023
most citedReconstruction of Band Structure Induced by Electronic Nematicity in an FeSe Superconductor

279 citations · 1.3k across the 43 of their papers we have counts for

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Showing 2014Show all

6 papers · 1 filter

cond-mat.mtrl-sci2014★ 18 cited

Van der Waals epitaxial growth of topological insulator BiSbTeSe ultrathin nanoplate on electrically insulating fluorophlogopite mica

Ngoc Han Tu, Yoichi Tanabe, Khuong Kim Huynh +7

We report the growth of high quality BiSbTeSe ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst…

cond-mat.mtrl-sci2014★ 11 cited

Path of the current flow at the metal contacts of graphene field-effect transistors with distorted transfer characteristics

Ryo Nouchi, Katsumi Tanigaki

Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the tra…

cond-mat.supr-con2014★ 83 cited

Electric Transport of a Single Crystal Iron Chalcogenide FeSe Superconductor: Evidence of Symmetry Breakdown Nematicity and Additional Ultrafast Dirac cone-Like Carriers

K. K. Huynh, Y. Tanabe, T. Urata +4

An SDW antiferromagnetic (SDW-AF) low temperature phase transition is generally observe and the AF spin fluctuations are considered to play an important role for the superconductiv…

cond-mat.supr-con2014★ 279 cited

Reconstruction of Band Structure Induced by Electronic Nematicity in an FeSe Superconductor

K. Nakayama, Y. Miyata, G. N. Phan +5

We have performed high-resolution angle-resolved photoemission spectroscopy on FeSe superconductor (Tc ~ 8 K), which exhibits a tetragonal-to-orthorhombic structural transition at…

cond-mat.mtrl-sci2014★ 12 cited

Electron and Hole Injection via Charge Transfer at the Topological-Insulator /Organic-Molecule Interface

Yoichi Tanabe, Khuong Kim Huynh, Ryo Nouchi +5

As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's…

cond-mat.mtrl-sci2014★ 20 cited

Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Ryo Nouchi, Masanori Shigeno, Nao Yamada +3

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work func…