Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Abstract

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited to being static. We show that a dynamic nature can be imparted to the interfaces using electrode surface modification with a structurally disordered molecular monolayer. The barrier height at the interfaces is altered significantly in a reversible way by an external electric field. As a result, a dramatic change in the carrier transport properties through the interfaces is observed, such as a reversible polarity reversion of metal/organic-semiconductor/metal diodes.

25 pages

References in corpus (2)

• Bias-dependent Contact Resistance in Rubrene Single-Crystal Field-Effect Transistors
• Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Cited by in corpus (4)

• Molecular Electronics by Chemical Modification of Semiconductor Surfaces
• Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers
• Substituent-Controlled Reversible Switching of Charge-Injection-Barrier Heights at Metal/Organic-Semiconductor Contacts Modified with Disordered Molecular Monolayers
• Dipolar Switching of Charge-Injection Barriers at Electrode/Semiconductor Interfaces as a Mechanism for Water-Induced Instabilities of Organic Devices