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most citedStructural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

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physics.app-ph2018

Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering

S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco +8

We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sput…