16 citations · 23 across the 3 of their papers we have counts for
4 papers · 1 filter
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
A. G. Taboada, A. M. Sánchez, A. M. Beltrán +12
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile…
Optical properties of metamorphic type-I InAsSb/AlInAs quantum wells grown on GaAs for the mid-infrared spectral range
Eva Repiso, Christopher A. Broderick, Maria de la Mata +7
We analyse the optical properties of InAsSb/AlInAs quantum wells (QWs) grown by molecular beam epitaxy on relaxed AlInAs metamorphic buffe…
Analysis of the 3D distribution of self-assembled stacked quantum dots by electron tomography
Jesús Hernández-Saz, Miriam Herrera, Diego Alonso-Álvarez +1
This paper has been withdrawn by the authors. The 3D distribution of self-assembled stacked quantum dots (QDs) is a key parameter to obtain the highest performance in a variety of…
Strain balanced quantum posts
D. Alonso-Álvarez, B. Alén, J. M. Ripalda +8
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most s…