16 citations · 37 across the 6 of their papers we have counts for
6 papers
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
A. G. Taboada, A. M. Sánchez, A. M. Beltrán +12
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile…
Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering
M. Sun, R. Blasco, M. de la Mata +5
Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To mod…
Optical properties of metamorphic type-I InAsSb/AlInAs quantum wells grown on GaAs for the mid-infrared spectral range
Eva Repiso, Christopher A. Broderick, Maria de la Mata +7
We analyse the optical properties of InAsSb/AlInAs quantum wells (QWs) grown by molecular beam epitaxy on relaxed AlInAs metamorphic buffe…
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering
S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco +8
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sput…
Analysis of the 3D distribution of self-assembled stacked quantum dots by electron tomography
Jesús Hernández-Saz, Miriam Herrera, Diego Alonso-Álvarez +1
This paper has been withdrawn by the authors. The 3D distribution of self-assembled stacked quantum dots (QDs) is a key parameter to obtain the highest performance in a variety of…
Strain balanced quantum posts
D. Alonso-Álvarez, B. Alén, J. M. Ripalda +8
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most s…