170 citations · 884 across the 10 of their papers we have counts for
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Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
Antonio Di Bartolomeo, Giuseppe Luongo, Filippo Giubileo +5
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricat…
Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
Antonio Di Bartolomeo, Maurizio Passacantando, Gang Niu +4
We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic b…
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
Antonio Di Bartolomeo, Filippo Giubileo, Giuseppe Luongo +7
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patte…
Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
Antonio Di Bartolomeo, Filippo Giubileo, Francesco Romeo +5
We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure rang…
Graphene Grown on Ge(001) from Atomic Source
Gunther Lippert, Jarek Dabrowski, Thomas Schroeder +8
Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on…
Field emission from single and few-layer graphene flakes
S. Santandrea, F. Giubileo, V. Grossi +5
We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were p…
Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors
Antonio Di Bartolomeo, Filippo Giubileo, Salvatore Santandrea +4
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is…