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cond-mat.dis-nn2011
The electronic activity of boron and phosphorus impurities in a-Si and a-Si:H
Bin Cai, David A. Drabold
In amorphous materials, acceptor and donor impurities rarely dope the system (shift the Fermi level). We find out why in a-Si:H. We report simulations on B and P doping of a-Si:H a…
cond-mat.dis-nn2011
The properties of amorphous GaN
Bin Cai, David A. Drabold
In this paper, we present three amorphous GaN models obtained from the first principles simulation. We find that a chemically ordered continuous random network is the ideal structu…