3 papers
cond-mat.dis-nn2011
The electronic activity of boron and phosphorus impurities in a-Si and a-Si:H
Bin Cai, David A. Drabold
In amorphous materials, acceptor and donor impurities rarely dope the system (shift the Fermi level). We find out why in a-Si:H. We report simulations on B and P doping of a-Si:H a…
cond-mat.mtrl-sci2011
Atomistic Simulations of Flash Memory Materials Based on Chalcogenide Glasses
Bin Cai, Binay Prasai, D. A. Drabold
In this chapter, by using ab-initio molecular dynamics, we introduce the latest simulation results on two materials for flash memory devices: Ge2Sb2Te5 and Ge-Se-Cu-Ag. This chapte…
cond-mat.dis-nn2011
The properties of amorphous GaN
Bin Cai, David A. Drabold
In this paper, we present three amorphous GaN models obtained from the first principles simulation. We find that a chemically ordered continuous random network is the ideal structu…