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Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Jie Zhou, Ashok Dheenan, Jiarui Gong +13
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applicati…
Demonstration of Multi-Active Region P-down Green LEDs with High Quantum Efficiency
Sheikh Ifatur Rahman, Robert Armitage, Siddharth Rajan
Longer wavelength emitters such as green LEDs display a pronounced efficiency drop at higher current densities, resulting in relatively low wall-plug efficiency. Multi-active regio…
-GaO Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching
Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan +3
-GaO trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demon…