106 citations · 406 across the 14 of their papers we have counts for
12 papers · 1 filter
Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
Ran Xue, Max Beer, Inga Seidler +6
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quan…
Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
Inga Seidler, Tom Struck, Ran Xue +4
Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttli…
Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots
Luca Banszerus, Katrin Hecker, Eike Icking +7
Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine sin…
Integration of topological insulator Josephson junctions in superconducting qubit circuits
Tobias W. Schmitt, Malcolm R. Connolly, Michael Schleenvoigt +16
The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe ex…
Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots
Luca Banszerus, Thomas Fabian, Samuel Möller +11
A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular mag…
Reducing disorder in graphene nanoribbons by chemical edge modification
Jan Dauber, Bernat Terrés, Christian Volk +2
We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the…
Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
A. Epping, S. Engels, C. Volk +4
We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magneti…
Etched graphene quantum dots on hexagonal boron nitride
S. Engels, A. Epping, C. Volk +6
We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a stat…
Charge detection in a bilayer graphene quantum dot
Stefan Fringes, Christian Volk, Caroline Norda +5
We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon…
Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot
Stefan Fringes, Christian Volk, Bernat Terrés +4
We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot ener…
Comprehensive characterization of an individual carbon nanotube transport device
Robert Frielinghaus, Karin Goß, Stefan Trellenkamp +3
We present a comprehensive characterization of an individual multiwalled carbon nanotube transport device combining electron microscopy and Raman spectroscopy with electrical measu…
Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios
B. Terrés, J. Dauber, C. Volk +3
We present electron transport measurements on lithographically defined and etched graphene nanoconstrictions with different aspect ratios including different lengths (L) and widths…