activity
20112026
most citedThe effect of the driving frequency on the confinement of beam electrons and plasma density in low pressure capacitive discharges

98 citations · 663 across the 36 of their papers we have counts for

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Showing 2024Show all

5 papers · 1 filter

cond-mat.mes-hall2024

Wedge-type engineered analog SiO/Cu/SiO-Memristive Devices for Neuromorphic Applications

Rouven Lamprecht, Luca Vialetto, Tobias Gergs +4

This study presents a comprehensive examination of the development of TiN/SiO/Cu/SiO/TiN memristive devices, engineered for neuromorphic applications usin…

cond-mat.mtrl-sci2024

Physics-based Modeling and Simulation of Nanoparticle Networks

Torben Hemke, Robin Struck, Sahitya Yarragolla +3

This study presents the computational modeling and simulation of silver nanoparticle networks (NPNs), which, in the realm of neuromorphic computation, suggest to be a promising can…

cs.ET2024★ 12 cited

Nonlinear behavior of memristive devices for hardware security primitives and neuromorphic computing systems

Sahitya Yarragolla, Torben Hemke, Fares Jalled +4

Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonline…

cond-mat.mes-hall2024★ 3 cited

Coexistence of resistive capacitive and virtual inductive effects in memristive devices

Sahitya Yarragolla, Torben Hemke, Jan Trieschmann +1

This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-t…

cond-mat.mes-hall2024★ 9 cited

Non-zero crossing current-voltage characteristics of interface-type resistive switching devices

Sahitya Yarragolla, Torben Hemke, Jan Trieschmann +1

A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully unders…