26 citations · 365 across the 56 of their papers we have counts for
6 papers · 2 filters
On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer
Larisa V. Arapkina, Vladimir A. Yuryev
Structural models of growing Ge hut clusters---pyramids and wedges---are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(00…
Calculation of thermal parameters of SiGe microbolometers
A. V. Voitsekhovskii, D. V. Grigoryev, V. A. Yuryev +1
The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the…
Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity
V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh +8
Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-s…
STM investigation of structural properties of Si layers deposited on Si(001) vicinal surfaces
L. V. Arapkina, V. A. Chapnin, K. V. Chizh +2
This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes o…
Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity
V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh +8
Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and i…
Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM
L. V. Arapkina, L. A. Krylova, K. V. Chizh +3
Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470--650C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber h…