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Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder
Matthew Brahlek, Yong Seung Kim, Namrata Bansal +2
Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi…
Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3
Yong Seung Kim, Matthew Brahlek, Namrata Bansal +7
We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170…
Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
Namrata Bansal, Yong Seung Kim, Eliav Edrey +10
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve inter…
Thickness-independent transport channels in topological insulator Bi2Se3 thin films
Namrata Bansal, Yong Seung Kim, Matthew Brahlek +2
With high quality topological insulator (TI) Bi2Se3 thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally cons…