221 citations · 374 across the 7 of their papers we have counts for
7 papers
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
Priti Gupta, A. A. Rahman, Shruti Subramanian +10
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that…
p-type doping in CVD grown MoS2 using Nb
M. Laskar, D. N. Nath, L. Ma +12
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient…
Low frequency noise in chemical vapor deposited MoS2
Yuji Wang, Xinhang Luo, Ningjiao Zhang +5
Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanos…
Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar, Lu Ma, ShanthaKumar K +6
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and techno…
Polarization sensitive solar-blind detector based on a-plane AlGaN
Masihhur R. Laskar, A. Arora, A. P. Shah +3
We report polarization-sensitive solar-blind metal-semiconductor-metal UV photodetectors based on (11-20) a-plane AlGaN. The epilayer shows anisotropic optical properties confirmed…
Distorted wurtzite unit cells: Determination of lattice parameters of non-polar a-plane AlGaN and estimation of solid phase Al content
Masihhur R. Laskar, Tapas Ganguli, A. A. Rahman +3
Unlike c-plane nitrides, ``non-polar" nitrides grown in e.g. the a-plane or m-plane orientation encounter anisotropic in-plane strain due to the anisotropy in the lattice and therm…
Anisotropic structural and optical properties of a-plane (11-20) AlInN nearly-lattice-matched to GaN
Masihhur R. Laskar, Abdul Kadir, A. A. Rahman +4
We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously la…