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researcher

M. Laskar

7 papers hereh-index 12999 citations25 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author4
  • middle author2

Across the 6 of 7 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci6
  • cond-mat.mes-hall1
same name
  • M. Laskar — 5 papers, h 5
  • M. Laskar — 1 paper, h 8

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20102015
most citedLarge Area Single Crystal (0001) Oriented MoS2 Thin Films

221 citations · 374 across the 7 of their papers we have counts for

collaborators
Showing 2013Show all

3 papers · 1 filter

cond-mat.mtrl-sci2013

p-type doping in CVD grown MoS2 using Nb

M. Laskar, D. N. Nath, L. Ma +12

We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient…

cond-mat.mes-hall2013★ 4 cited

Low frequency noise in chemical vapor deposited MoS2

Yuji Wang, Xinhang Luo, Ningjiao Zhang +5

Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanos…

cond-mat.mtrl-sci2013★ 221 cited

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Masihhur R. Laskar, Lu Ma, ShanthaKumar K +6

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and techno…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.