221 citations · 374 across the 7 of their papers we have counts for
6 papers · 1 filter
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
Priti Gupta, A. A. Rahman, Shruti Subramanian +10
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that…
p-type doping in CVD grown MoS2 using Nb
M. Laskar, D. N. Nath, L. Ma +12
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient…
Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar, Lu Ma, ShanthaKumar K +6
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and techno…
Polarization sensitive solar-blind detector based on a-plane AlGaN
Masihhur R. Laskar, A. Arora, A. P. Shah +3
We report polarization-sensitive solar-blind metal-semiconductor-metal UV photodetectors based on (11-20) a-plane AlGaN. The epilayer shows anisotropic optical properties confirmed…
Distorted wurtzite unit cells: Determination of lattice parameters of non-polar a-plane AlGaN and estimation of solid phase Al content
Masihhur R. Laskar, Tapas Ganguli, A. A. Rahman +3
Unlike c-plane nitrides, ``non-polar" nitrides grown in e.g. the a-plane or m-plane orientation encounter anisotropic in-plane strain due to the anisotropy in the lattice and therm…
Anisotropic structural and optical properties of a-plane (11-20) AlInN nearly-lattice-matched to GaN
Masihhur R. Laskar, Abdul Kadir, A. A. Rahman +4
We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously la…