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physics.app-ph2019
Gallium Nitride FET Model
G. I. Zebrev, V. V. Orlov
We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the…
physics.app-ph2019
Long Term Logarithmic Annealing in p-MNOS RADFETs and Renormalization of Relaxation Parameters
G. I. Zebrev, P. A. Zimin, E. V. Mrozovskaya +3
It was experimentally shown that annealing (fading) of the pMNOS based dosimeters has close to logarithmic temporal dependence during and after irradiation. The results are shown t…
physics.app-ph2019
Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures
G. I. Zebrev, P. A. Zimin, E. V. Mrozovskaya +2
This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown t…