21 citations · 52 across the 20 of their papers we have counts for
20 papers
Extreme Value Based Estimation of Critical Single Event Failure Probability
G. I. Zebrev, A. M. Galimov, R. G. Useinov +1
A new survival probability function of ICs under space ion impact is proposed. Unlike the conventional approach, the function is based on the extreme value statistics which is rele…
Gallium Nitride FET Model
G. I. Zebrev, V. V. Orlov
We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the…
Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices
G. I. Zebrev, S. A. Shostachenko
Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graph…
Long Term Logarithmic Annealing in p-MNOS RADFETs and Renormalization of Relaxation Parameters
G. I. Zebrev, P. A. Zimin, E. V. Mrozovskaya +3
It was experimentally shown that annealing (fading) of the pMNOS based dosimeters has close to logarithmic temporal dependence during and after irradiation. The results are shown t…
Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures
G. I. Zebrev, P. A. Zimin, E. V. Mrozovskaya +2
This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown t…
Static and Dynamic Oxide-Trapped-Charge-Induced Variability in Nanoscale CMOS Circuits
Gennady Zebrev
The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variabi…