Gallium Nitride FET Model
arXiv:1909.05702 · doi:10.1088/1757-899X/475/1/012007
Abstract
We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.
IOP Conference Series: Materials Science and Engineering, 5 pages, 2 figures