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cond-mat.mes-hall2011
Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes
Gennady I. Zebrev, Alexander A. Tselykovskiy, Valentin O. Turin
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the elec…
cond-mat.mes-hall2011
Nonequilibrium Diagrammatic Technique for Nanoscale Devices
G. I. Zebrev
A general approach based on gauge invariance requirements has been developed for automatic construction of quantum kinetic equation in electron systems, far for equilibrium. Propos…
cond-mat.mes-hall2011
Graphene Field Effect Transistors: Diffusion-Drift Theory
Gennady I. Zebrev
Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characterist…