activity
20112014
most citedHigh Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

1.8k citations · 3.4k across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2014★ 1.1k cited

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Hui Fang, Corsin Battaglia, Carlo Carraro +16

Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility tra…

cond-mat.mtrl-sci2014

MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts

Steven Chuang, Corsin Battaglia, Angelica Azcatl +8

The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particul…

cond-mat.mes-hall2012★ 1.8k cited

High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

Hui Fang, Steven Chuang, Ting Chia Chang +3

We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and h…

cond-mat.mes-hall2012★ 46 cited

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

Junghyo Nah, S. Bala Kumar, Hui Fang +6

We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are s…

cond-mat.mtrl-sci2011

Highly Quantum-Confined InAs Nanoscale Membranes

Kuniharu Takei, Hui Fang, Bala Kumar +10

Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device prop…

cond-mat.mtrl-sci2011★ 412 cited

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia +13

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further…