Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

Enrique A. Carrion, Andrey Y. Serov, Sharnali Islam +6

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain c…