39 citations · 54 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2012★ 39 cited
On melting of silicon carbide under pressure
Petr S. Sokolov, Vladimir A. Mukhanov, Thierry Chauveau +1
The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative…
cond-mat.mtrl-sci2010★ 15 cited
Structural, static and dynamic magnetic properties of CoMnGe thin films on a sapphire a-plane substrate
Mohamed Belmeguenai, Fatih Zighem, Thierry Chauveau +6
Magnetic properties of CoMnGe thin films of different thicknesses (13, 34, 55, 83, 100 and 200 nm), grown by RF sputtering at 400°C on single crystal sapphire substrates, were stud…