On melting of silicon carbide under pressure

Abstract

The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.

5 pages, 2 figures

References in corpus (1)

• On melting of B4C boron carbide under pressure

Cited by in corpus (1)

• Melting and decomposition of orthorhombic B6Si under high pressure