On melting of silicon carbide under pressure
arXiv:1210.3244 · doi:10.3103/S1063457612050097
Abstract
The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.
5 pages, 2 figures