53 citations · 131 across the 5 of their papers we have counts for
5 papers · 1 filter
Efficiently Engineered Room Temperature Single Photons in Silicon Carbide
S. Castelletto, B. C. Johnson, N. Stavrias +2
We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC…
Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers
B. C. Johnson, J. C. McCallum
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profil…
Intrinsic and dopant enhanced solid phase epitaxy in amorphous germanium
B. C. Johnson, P. Gortmaker, J. C. McCallum
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE…
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
B. C. Johnson, J. C. McCallum, L. H. Willems van Beveren +1
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors fo…