529 citations · 2.1k across the 20 of their papers we have counts for
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Quantifying Perovskite Solar Cell Degradation via Machine Learning from Spatially Resolved Multimodal Luminescence Time Series
Giulio Barletta, Simon Ternes, Saif Ali +7
Perovskite solar cells achieve remarkable power conversion efficiencies, yet operational stability remains a major barrier to large-scale deployment. Reliable and rapid assessment…
Effect of FABr Over-Stoichiometry on the Morphology and Optoelectronic Properties of Wide-Bandgap FAPbBr_3 Films
G. Ammirati, F. Martelli, F. Toschi +9
In this study, we investigate the impact of formamidinium bromide (FABr) over-stoichiometry in the precursor solution on the optoelectronic properties and morphology of the resulti…
Single-step Chemical Vapor Deposition of Methyl Ammonium Lead Halide Perovskite for p-i-n Solar Cells
Dmitry S. Muratov, Lev Luchnikov, Danila Saranin +5
Metal halide perovskite solar cells being one of the fastest emerging technologies for renewable energy still has to become more industry friendly in a way that will allow using it…
Photo Stabilization of p-i-n Perovskite Solar Cells with Bathocuproine: MXene
Anastasia Yusheva, Danila Saranin, Dmitry Muratov +10
Interface engineering is one of the promising strategies for the long-term stabilization of perovskite solar cells, preventing chemical decomposition induced by external agents and…
Phase transition at 350 K in the TiCT MXene: possible sliding (moiré) ferroelectricity
Francesco Cordero, Hanna Pazniak, Thierry Ouisse +4
A phase transition is found in TiCT MXene at 350 K, by measuring the complex Young's modulus of self-standing thick films. A step-like softening and increase of the mec…
Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection
F. Biccari, F. Gabelloni, E. Burzi +9
The electron transport layer (ETL) plays a fundamental role in perovskite solar cells. Recently, graphene-based ETLs have been proved to be good candidate for scalable fabrication…
Unraveling the "Green Gap" problem: The role of random alloy fluctuations in InGaN/GaN light emitting diodes
Matthias Auf der Maur, Alessandro Pecchia, Gabriele Penazzi +2
White light emitting diodes based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phos…
Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates
M. Hugues, P. A. Shields, F. Sacconi +7
Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1…
Tailorable acceptor and donor pairs for molecular electronics
Rui-Hua Xie, Garnett W. Bryant, Jijun Zhao +3
Our first-principles calculations demonstrate that and molecules can be engineered as the acceptors and donors, respectively…
Effects of macroscopic polarization in III-V nitride multi-quantum-wells
V. Fiorentini, F. Bernardini, F. Della Sala +2
Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the…
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
F. Della Sala, A. Di Carlo, P. Lugli +4
The free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum wells lasers is investigated via a self-consistent tight-binding approach. We show that…